Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: benefits & constraints (2019)

First Author: Tiwari A

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2019.8757586

Publication URI: http://dx.doi.org/10.1109/ispsd.2019.8757586

Type: Conference/Paper/Proceeding/Abstract