Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region (2022)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2021.3112384
Publication URI: http://dx.doi.org/10.1109/tpel.2021.3112384
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Power Electronics
Issue: 3