The Optimization of 3.3 kV 4H-SiC JBS Diodes (2022)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2021.3129705
Publication URI: http://dx.doi.org/10.1109/ted.2021.3129705
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 1