High-performance solution-processed Ti 3 C 2 T x MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas (2021)
Attributed to:
ZnO MESFETs for application to Intelligent Windows
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/d1ta01355f
Publication URI: http://dx.doi.org/10.1039/d1ta01355f
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry A
Issue: 32