High-performance solution-processed Ti 3 C 2 T x MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas (2021)

First Author: Zhao T
Attributed to:  ZnO MESFETs for application to Intelligent Windows funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d1ta01355f

Publication URI: http://dx.doi.org/10.1039/d1ta01355f

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry A

Issue: 32