📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)

First Author: Arvanitopoulos A

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tia.2021.3087667

Publication URI: http://dx.doi.org/10.1109/tia.2021.3087667

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industry Applications

Issue: 5