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Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)

First Author: Arvanitopoulos A

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tia.2021.3087667

Publication URI: http://dx.doi.org/10.1109/tia.2021.3087667

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industry Applications

Issue: 5