Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tia.2021.3087667
Publication URI: http://dx.doi.org/10.1109/tia.2021.3087667
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Industry Applications
Issue: 5