Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications (2021)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/abefa1
Publication URI: http://dx.doi.org/10.1088/1361-6641/abefa1
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 5