Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs (2020)

First Author: Gonzalez J
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/irps45951.2020.9129637

Publication URI: http://dx.doi.org/10.1109/irps45951.2020.9129637

Type: Conference/Paper/Proceeding/Abstract