OPTIMISATION OF THE GATE VOLTAGE IN SiC MOSFETS: EFFICIENCY VS RELIABILITY (2021)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/icp.2021.1043
Publication URI: http://dx.doi.org/10.1049/icp.2021.1043
Type: Journal Article/Review
Parent Publication: IET Conference Proceedings
Issue: 7