OPTIMISATION OF THE GATE VOLTAGE IN SiC MOSFETS: EFFICIENCY VS RELIABILITY (2021)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/icp.2021.1043
Publication URI: http://dx.doi.org/10.1049/icp.2021.1043
Type: Conference/Paper/Proceeding/Abstract