Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Type: Journal Article/Review
Parent Publication: Materials Science Forum