📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)

First Author: Renz A

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Type: Journal Article/Review

Parent Publication: Materials Science Forum