Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Type: Journal Article/Review
Parent Publication: Materials Science Forum