Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)

First Author: Renz A
Attributed to:  Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Type: Journal Article/Review

Parent Publication: Materials Science Forum