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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET (2020)

First Author: Dai T

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.808

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.808

Type: Journal Article/Review

Parent Publication: Materials Science Forum