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The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale (2021)

First Author: Hofmann E

Attributed to: Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2021.149961

Publication URI: http://dx.doi.org/10.1016/j.apsusc.2021.149961

Type: Journal Article/Review

Parent Publication: Applied Surface Science