The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale (2021)
Attributed to:
Coherent Optical and Microwave Physics for Atomic-Scale Spintronics in Silicon (COMPASSS)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2021.149961
Publication URI: http://dx.doi.org/10.1016/j.apsusc.2021.149961
Type: Journal Article/Review
Parent Publication: Applied Surface Science