Correlation between deep-level defects and functional properties of ß-(Sn x Ga1- x )2O3 on Si photodetectors (2021)
Attributed to:
Quantitative non-destructive nanoscale characterisation of advanced materials
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0068186
Publication URI: http://dx.doi.org/10.1063/5.0068186
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 20