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A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development (2021)

First Author: Judge P

Attributed to: Quietening ultra-low-loss SiC & GaN waveforms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce-asia49820.2021.9479081

Publication URI: http://dx.doi.org/10.1109/ecce-asia49820.2021.9479081

Type: Conference/Paper/Proceeding/Abstract