A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development (2021)
Attributed to:
Quietening ultra-low-loss SiC & GaN waveforms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ecce-asia49820.2021.9479081
Publication URI: http://dx.doi.org/10.1109/ecce-asia49820.2021.9479081
Type: Conference/Paper/Proceeding/Abstract