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Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors. (2021)

First Author: Napari M

Attributed to: Centre for Advanced Materials for Integrated Energy Systems (CAM-IES) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsami.0c18915

PubMed Identifier: 33443398

Publication URI: http://europepmc.org/abstract/MED/33443398

Type: Journal Article/Review

Volume: 13

Parent Publication: ACS applied materials & interfaces

Issue: 3

ISSN: 1944-8244