Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region (2022)
Attributed to:
Modelling, Optimisation and Design of Conversion for Offshore Renewable Energy (UK-China MOD-CORE)
funded by
Newton Fund
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2021.3112384
Publication URI: http://dx.doi.org/10.1109/tpel.2021.3112384
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Power Electronics
Issue: 3