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Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C (2022)

First Author: Antoniou G

Attributed to: Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0079195

Publication URI: http://dx.doi.org/10.1063/5.0079195

Type: Journal Article/Review

Parent Publication: APL Materials

Issue: 3