Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1-xN nucleation layers (2022)

First Author: Gundimeda A
Attributed to:  Fundamental studies of zincblende nitride structures for optoelectronic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0077186

Publication URI: http://dx.doi.org/10.1063/5.0077186

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11