High-Performance Enhancement-Mode p -Channel GaN MISFETs With Steep Subthreshold Swing (2022)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3152308
Publication URI: http://dx.doi.org/10.1109/led.2022.3152308
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 4