Back-End-of-Line SiC-Based Memristor for Resistive Memory and Artificial Synapse (2022)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/aelm.202200312
Publication URI: http://dx.doi.org/10.1002/aelm.202200312
Type: Journal Article/Review
Parent Publication: Advanced Electronic Materials
Issue: 9