Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching (2022)

First Author: Zhou X
Attributed to:  Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3179590

Publication URI: http://dx.doi.org/10.1109/led.2022.3179590

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 7