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Etching of the SiGa x N y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core-Shell Nanowires by MOVPE (2022)

First Author: Bosch J

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.2c00286

Publication URI: http://dx.doi.org/10.1021/acs.cgd.2c00286

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 9