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High synergy atomic layer etching of AlGaN/GaN with HBr and Ar (2022)

First Author: Crawford K

Attributed to: Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/6.0001862

Publication URI: http://dx.doi.org/10.1116/6.0001862

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology A

Issue: 4