Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect (2022)

First Author: Yin Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41699-022-00332-6

Publication URI: http://dx.doi.org/10.1038/s41699-022-00332-6

Type: Journal Article/Review

Parent Publication: npj 2D Materials and Applications

Issue: 1