Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared (2018)

First Author: Keen J
Attributed to:  InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2018.08.001

Publication URI: http://dx.doi.org/10.1016/j.infrared.2018.08.001

Type: Journal Article/Review

Parent Publication: Infrared Physics & Technology