The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix (2022)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac95a3
Publication URI: http://dx.doi.org/10.1088/1361-6463/ac95a3
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 49