Development of an optically gated Fe / n -GaAs spin-polarized transistor (2022)
Attributed to:
Spintronic Devices for Integrated Logic Circuits
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.106.134404
Publication URI: http://dx.doi.org/10.1103/physrevb.106.134404
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 13