Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique (2022)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3203633
Publication URI: http://dx.doi.org/10.1109/led.2022.3203633
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 10