Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique (2022)

First Author: Yin Y
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3203633

Publication URI: http://dx.doi.org/10.1109/led.2022.3203633

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 10