Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit (2021)

First Author: Varghese A
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jsen.2021.3072476

Publication URI: http://dx.doi.org/10.1109/jsen.2021.3072476

Type: Journal Article/Review

Parent Publication: IEEE Sensors Journal

Issue: 13