Frequency Doubler Based on a Lateral Multi-Channel GaN Schottky Barrier Diode for 5G Technology (2020)

First Author: Alathbah M
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/asdam50306.2020.9393861

Publication URI: http://dx.doi.org/10.1109/asdam50306.2020.9393861

Type: Conference/Paper/Proceeding/Abstract