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Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN (2022)

First Author: Markevich V

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.202200545

Publication URI: http://dx.doi.org/10.1002/pssb.202200545

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 8