Graphene FETs with high and low mobilities have universal temperature-dependent properties. (2023)

First Author: Gosling JH
Attributed to:  Enabling Next Generation Additive Manufacturing funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6528/aca981

PubMed Identifier: 36595273

Publication URI: http://europepmc.org/abstract/MED/36595273

Type: Journal Article/Review

Volume: 34

Parent Publication: Nanotechnology

Issue: 12

ISSN: 0957-4484