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The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors (2021)

First Author: Simatos D

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0044785

Publication URI: http://dx.doi.org/10.1063/5.0044785

Type: Journal Article/Review

Parent Publication: APL Materials

Issue: 4