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Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy (2010)

First Author: Zhu T

Attributed to: Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983523

Publication URI: http://dx.doi.org/10.1002/pssc.200983523

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 7-8