Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs (2022)

First Author: Naydenov K
Attributed to:  Power Semiconductor Devices for Smart Grid Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ispsd49238.2022.9813631

Publication URI: http://dx.doi.org/10.1109/ispsd49238.2022.9813631

Type: Conference/Paper/Proceeding/Abstract