Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD (2023)

First Author: Ghosh S
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/acb9b6

Publication URI: http://dx.doi.org/10.1088/1361-6641/acb9b6

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 4