Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates. (2022)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/d2nr04866c
PubMed Identifier: 36374132
Publication URI: http://europepmc.org/abstract/MED/36374132
Type: Journal Article/Review
Volume: 14
Parent Publication: Nanoscale
Issue: 46
ISSN: 2040-3364