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Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates. (2022)

First Author: Yang J

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d2nr04866c

PubMed Identifier: 36374132

Publication URI: http://europepmc.org/abstract/MED/36374132

Type: Journal Article/Review

Volume: 14

Parent Publication: Nanoscale

Issue: 46

ISSN: 2040-3364