Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing (2018)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.8b04048
PubMed Identifier: 30525674
Publication URI: http://europepmc.org/abstract/MED/30525674
Type: Journal Article/Review
Parent Publication: Nano Letters
Issue: 1
ISSN: 1530-6984