SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2018)
Attributed to:
Underpinning Power Electronics 2012: Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/iet-est.2017.0022
Publication URI: http://dx.doi.org/10.1049/iet-est.2017.0022
Type: Journal Article/Review
Parent Publication: IET Electrical Systems in Transportation
Issue: 1
ISSN: 20429746 20429738