Influence of Al x Ga 1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac4c58
Publication URI: http://dx.doi.org/10.1088/1361-6463/ac4c58
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 17