A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions (2022)

First Author: Zhu C

Attributed to: Monolithic on-chip integration of microscale laser diodes (uLDs) and electronics for micro-displays and visible light communications funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 44