Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor. (2022)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma15176043
PubMed Identifier: 36079422
Publication URI: http://europepmc.org/abstract/MED/36079422
Type: Journal Article/Review
Volume: 15
Parent Publication: Materials (Basel, Switzerland)
Issue: 17
ISSN: 1996-1944