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Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy (2023)

First Author: Xiu H

Attributed to: Fundamental studies of zincblende nitride structures for optoelectronic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0138478

Publication URI: http://dx.doi.org/10.1063/5.0138478

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 10